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2N7000CSM 데이터시트(PDF) 1 Page - Seme LAB |
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2N7000CSM 데이터시트(HTML) 1 Page - Seme LAB |
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1 / 2 page ![]() Prelim. 8/00 2N7000CSM Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk * Pulse width limited by maximum junction temperature. N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES •V(BR)DSS = 60V • RDS(ON) = 5W W W W •ID = 200mA • Hermetic Ceramic Surface Mount package • Screening Options Available VDS Drain – Source Voltage VGS Gate – Source Voltage ID Drain Current @ TCASE = 25°C IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25°C Tj Operating Junction Temperature Range Tstg Storage Temperature Range 60V ±40V 200mA 500mA 300mW –55 to 150°C –55 to 150°C MECHANICAL DATA Dimensions in mm (inches) ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) SOT23 CERAMIC (LCC1 PACKAGE) 21 0.51 ± 0.10 (0.02 ± 0.004) 0.31 (0.012) 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (0.055) max. A 0.31 (0.012) rad. rad. A = 3 PAD 1 – Gate Underside View PAD 2 – Source PAD 3 – Drain |
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