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ADP197ACBZ-R7 데이터시트(PDF) 10 Page - Analog Devices

부품명 ADP197ACBZ-R7
상세설명  5 V, 3 A Logic Controlled High-Side Power Switch Mobile phones
PDF  16 Pages
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ADP197
Rev. 0 | Page 10 of 16
THEORY OF OPERATION
GND
EN
VIN
VOUT
ADP197
CHARGE PUMP
AND SLEW RATE
CONTROL
OVERTEMPERATURE
PROTECTION
Figure 23. Functional Block Diagram
The ADP197 is a high-side NMOS load switch, controlled by an
internal charge pump. The APD197 is designed to operate with
power supply voltages between 1.8 V and 5.5 V.
An internal charge pump biases the NMOS switch to achieve a
relatively constant, ultralow on resistance of 12 mΩ across the
entire input voltage range. The use of the internal charge pump
also allows for controlled turn-on times. Turning the NMOS switch
on and off is controlled by the enable input, EN, which is capable of
interfacing directly with 1.8 V logic signals.
The ADP197 is capable of 3 A of continuous current as long as TJ
is less than 70°C. At 85°C, the rated current drops to 2.22 A.
The overtemperature protection circuit activates if the load cur-
rent causes the junction temperature to exceed 125°C. When
this occurs, the overtemperature protection circuitry disables
the output until the junction temperature falls below approximately
110°C, at which point the output is reenabled. If the fault condition
persists, the output cycles off and on until the fault is removed.
ESD protection structures are shown in the block diagram as Zener
diodes.
The ADP197 is a low quiescent current device with a nominal
4 MΩ pull-down resistor on its enable pin (EN). The package is a
space-saving 1.0 mm × 1.5 mm, 6-ball WLCSP.



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