전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

TLE4953 데이터시트(PDF) 4 Page - Infineon Technologies AG

부품명 TLE4953
상세설명  Differential Two-Wire Hall Effect Sensor IC
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE4953 데이터시트(HTML) 4 Page - Infineon Technologies AG

  TLE4953 Datasheet HTML 1Page - Infineon Technologies AG TLE4953 Datasheet HTML 2Page - Infineon Technologies AG TLE4953 Datasheet HTML 3Page - Infineon Technologies AG TLE4953 Datasheet HTML 4Page - Infineon Technologies AG TLE4953 Datasheet HTML 5Page - Infineon Technologies AG TLE4953 Datasheet HTML 6Page - Infineon Technologies AG TLE4953 Datasheet HTML 7Page - Infineon Technologies AG TLE4953 Datasheet HTML 8Page - Infineon Technologies AG TLE4953 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 20 page
background image
Data Sheet
1
V 4.0, 2010-04
Data Sheet V4.0
Differential Two-Wire Hall Effect Sensor IC
TLE4953
TLE4953C
Features
• Two-wire PWM current interface
• Detection of rotation direction
• Dynamic self-calibration principle & high sensitivity
• Adaptive hysteresis
• Single chip solution - no external components
• Vibration suppression in calibrated mode
• South and north pole pre-induction possible
• High resistance to piezo effects
• Large operating air-gaps
• Wide operating temperature range
• From zero speed up to 12 kHz
• 1.8 nF overmolded capacitor
• For coarse transmission target wheels
The differential Hall Effect sensor TLE4953 is designed to provide information about
rotational speed and direction of rotation to modern transmission and ABS systems. The
output has been designed as a two wire current interface based on a Pulse Width
Modulation principle. The sensor operates without external components and combines
a fast power-up time with a wide frequency range. Excellent accuracy and sensitivity is
specified for harsh automotive requirements as a wide temperature range, high ESD
robustness and high EMC resilience. State-of-the-art BiCMOS technology is used for
monolithic integration of the active sensor areas and the signal conditioning.
Finally, the optimized piezo compensation and the integrated dynamic offset
compensation enable easy manufacturing and elimination of magnetic offsets. Adaptive
hysteresis concept increases the noise immunity. The TLE4953C is additionally
provided with an overmolded 1.8 nF capacitor for improved EMI performance.
Type
Marking
Order Code
Package
TLE4953C
53C1R
SP000710696
PG-SSO-2-4
TLE4953
53
SP000278512
PG-SSO-2-1
TLE4952 Series



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com