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TLE7181EM 데이터시트(PDF) 13 Page - Infineon Technologies AG

부품명 TLE7181EM
상세설명  H-Bridge and Dual Half Bridge Driver IC
PDF  29 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7181EM 데이터시트(HTML) 13 Page - Infineon Technologies AG

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Data Sheet
13
Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
Description and Electrical Characteristics
5.1.9
Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V
S = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.
Control inputs
5.1.1
Low level input voltage of PWM;
DIR
V
I_LL
––
1.0
V
–
5.1.2
High level input voltage of PWM;
DIR
V
I_HL
2.0
––V
–
5.1.3
Input hysteresis of PWM; DIR
d
VI
100
200
–
mV
–
5.1.4
PWM; DIR pull-down resistors to
GND
R
IL
20
–
50
k
Ω
–
5.1.5
Low level input voltage of ENA
V
E_LL
–
–
0.75
V
–
5.1.6
High level input voltage of ENA
V
E_HL
2.1
––V
–
5.1.7
Input hysteresis of ENA
d
VE
50
200
–
mV
–
5.1.8
ENA pull-down resistor to GND
R
IL
70
125
200
k
Ω
–
5.1.9
Low level input voltage of DRVDIS
V
D_LL
––
1.0
V
–
5.1.10
High level input voltage of DRVDIS
V
D_HL
2.0
––V
–
5.1.11
Input hysteresis of DRVDIS
d
VD
100
200
–
mV
–
5.1.12
DRVDIS pull-up resistor to internal
supply
R
DH
30
50
80
k
Ω
–
MOSFET driver output
5.1.13
Output source resistance
R
Sou
2–
13.5
Ω
I
Load=-20mA
5.1.14
Output sink resistance
R
Sink
2–
9.0
Ω
I
Load=20mA
5.1.15
High level output voltage Gxx vs.
Sxx
V
Gxx1
–11
15
V
13.5V
≤V
VS≤34V;
I
Load=0mA
5.1.16
High level output voltage Gxx vs.
Sxx
V
Gxx2
–11
13.5
V
13.5V
≤V
VS≤34V;
C
Load=20nF;
D.C.=50%;
f
PWM=20kHz
5.1.17
High level output voltage GHx vs.
SHx1)
V
GHx3
–
V
VS-1.5 –
V
7.0V<V
VS<13.5V;
C
Load=20nF;
D.C.=50%;
f
PWM=20kHz
5.1.18
High level output voltage GLx vs.
GND1)
V
GLx3
–
V
VS-0.5 –
V
7.0V<V
VS<13.5V;
C
Load=20nF;
f
PWM=20kHz &
D.C.=50%;
or D.C=100%



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