Any changing of specification will not be informed individual

BAV99

Dual Series Chips

Surface Mount Switching Diode

C ATHODE

ANODE

ANODE

C ATHODE

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

215

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BAV99 = A7

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

30

2.5

50

µAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

1.5

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

—

—

—

—

715

855

1000

1250

mVdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω

trr

—

6.0

ns

1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

FEATURES

·

Fast Switching Speed

·

Surface Mount Package Ideally Suited for

Automatic Insertion

·

For General Purpose Switching Applications

·

High Conductance

1

2

3

3

1

2

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free