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BAV199 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAV199 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Any changing of specification will not be informed individual BAV199 Switching Diode Plastic-Encapsulate Diode L A B S G V http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 1 of 2 K J C H D Top View 1 2 3 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 Features Forward Current IF: 215 mA Reverse Voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 C o ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT C o Reverse breakdown voltage V(BR) IR= 100 µA 70 V Reverse voltage leakage current IR VR=70V 5 nA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 900 1000 1100 1250 mV Diode capacitance CD VR=0V, f=1MHz 2 pF Reverse recovery time t r r 3 µS Marking JY Marking JY RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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