D2007UK

Prelim. 2/98

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

29W

65V

±20V

2A

–65 to 150°C

200°C

MECHANICAL DATA

12

3

4

A

M

F

E

D

C

B

HJ

I

G

K

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 400MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

DA

PIN 1

SOURCE

PIN 2

DRAIN

PIN 3

SOURCE

PIN 4

GATE

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from DC to 500 MHz

METAL GATE RF SILICON FET

TetraFET