BCP157 datasheet(1/2 Pages) SECOS

부품명	BCP157

상세설명	Medium Power Transistor

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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BCP157

PNP Silicon

Medium Power Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Features

°

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power

dissipation

Junction temperature

Storage temperature

∗1 Single pulse, Pw=10ms

∗2 When mounted on a 40×40×0.7 mm ceramic board.

Parameter

VCBO

VCEO

VEBO

PC

Tj

Tstg

-80

V

A(DC)

°C

-60

-5

-3

IC

A(Pulse)

-6

∗1

∗2

0.5

2W

W

150

−55~+150

Symbol

Limits

Unit

°

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage 2 VCE(Sat)2

Base-emitter saturation voltage Sat

Collector-emitter saturation voltage 1

Output capacitance

Current Gain - Bandwidth Product

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VBE(Sat)

VCE(sat)1

VBE(On)

Cob

Min.

-80

-60

-5

−

-0.9

−

-150

-0.8

−

0.1

-1.25

-300

-1.0

V

VCE=-2V, IC=-1A

30

V

IC

=−100µA, IE=0

IC

=−10mA, IB=0

IE

=−100 µA, IC=0

VCB

=−60V, IE=0

VEB

=−4V, IC=0

IC=-1A, IB=-100mA

IC

=−1A,IB=-100mA

VCE

=−5V, IC=-100mA, f=100MHz

VCB

=−10V, IE=0A, f=1MHz

V

µA

V

mV

MHz

pF

Typ.

Max.

Unit

Conditions

1. -60Volt V CEO

2. 3 Amp continuous current

3. Low saturation voltage

SOT-89

1.BASE

2.COLLECTOR

3.EMITTER

fT

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Min

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

2.900

0.900

Max

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

3.100

1.100

Min

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.114

0.035

Max

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

0.122

0.043

Dimensions In Millimeters

Dimensions In Inches

0.060TYP

1.500TYP

D

D1

C

A

b

b1

e

e1

01-Jun-2002 Rev. A

Page 1 of 2

Base-emitter saturation voltage On

Switching Time

Current Gain

hFE4

hFE1

hFE2

hFE3

70

200

300

VCE=-2V, IC=-1A

200

170

150

100

80

40

VCE=-2V, IC=-2A

VCE=-2V, IC=-50mA

VCE=-2V, IC=-1A

VCE=-2V, IC=-500mA

VCC=-10V, IC=-500mA,

IB1=IB2=-50mA

Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2%

toff

ton

−

40

450

ns

100

140

−

-450

-600

mV

IC=-3A,IB=-300mA

Spice parameter data is available upon urquest for this device.

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