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APT34M60B 데이터시트(PDF) 4 Page - Microsemi Corporation

부품명 APT34M60B
상세설명  N-Channel MOSFET
PDF  4 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT34M60B 데이터시트(HTML) 4 Page - Microsemi Corporation

  APT34M60B_09 Datasheet HTML 1Page - Microsemi Corporation APT34M60B_09 Datasheet HTML 2Page - Microsemi Corporation APT34M60B_09 Datasheet HTML 3Page - Microsemi Corporation APT34M60B_09 Datasheet HTML 4Page - Microsemi Corporation  
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Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
D
3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°C)*(TJ - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
t1 = Pulse Duration
DC line
100µs
I
DM
10ms
13µs
100µs
I
DM
100ms
10ms
13µs
Rds(on)
DC line
T
J
= 150°C
T
C
= 25°C
1ms
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1
10
100
800
1
10
100
800
200
100
10
1
0.1
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
APT34M60B_S
T
J
= 125°C
T
C
= 75°C



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