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APT41F100J 데이터시트(PDF) 4 Page - Microsemi Corporation |
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APT41F100J 데이터시트(HTML) 4 Page - Microsemi Corporation |
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4 / 4 page ![]() 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. SOT-227 (ISOTOP®) Package Outline Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 1ms 100ms Rds(on) 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 Scaling for Different Case & Junction Temperatures: I D = ID(T C = 25 °C)*(TJ - TC)/125 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t 2 t2 t1 Note: t1 = Pulse Duration DC line 100μs I DM 10ms 13μs 100μs I DM 100ms 10ms 13μs Rds(on) DC line T J = 150°C T C = 25°C 1ms V DS, DRAIN-TO-SOURCE VOLTAGE (V) V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1 10 100 1000 1 10 100 1000 300 100 10 1 0.1 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 300 100 10 1 0.1 APT41F100J |
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