Static Characteristics

Dynamic Characteristics

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J

= 25°C, L = 13.36mH, R

G

= 25

Ω, I

AS

= 18A.

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

o(cr)

is defined as a fixed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is defined as a fixed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -2.85E-7/V

DS

^2 + 5.04E-8/V

DS

+ 9.75E-11.

6 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

µA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

µC

A

V/ns

Min

Typ

Max

1000

1.15

0.32

0.38

2.5

4

5

-10

250

1000

±100

Min

Typ

Max

35

140

1.1

300

650

1.61

4.21

11.6

15.8

25

Min

Typ

Max

39

9835

130

825

335

170

305

55

145

39

40

150

38

Test Conditions

V

GS

= 0V

D

= 250µA

Reference to 25°C, I

D

= 250µA

V

GS

= 10V

D

= 18A

V

GS

= V

I

D

= 2.5mA

V

DS

= 1000V

T

J

= 25°C

V

GS

= 0V

T

J

= 125°C

V

GS

= ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 18A

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

T

J

= 25°C

V

DD

= 100V

T

J

= 125°C

di

dt = 100A/µs

T

J

= 25°C

T

J

= 125°C

I

18A, di/dt

≤1000A/µs, V

DD

= 667V,

T

J

= 125°C

Test Conditions

V

DS

= 50V

D

= 18A

V

GS

= 0V

DS

= 25V

f = 1MHz

V

GS

= 0V

DS

= 0V to 667V

V

GS

= 0 to 10V

D

= 18A,

V

DS

= 500V

Resistive Switching

V

DD

= 667V

D

= 18A

R

G

= 2.2

GG

= 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

ΔV

BR(DSS)

/

ΔT

J

R

DS(on)

V

GS(th)

ΔV

GS(th)

/

ΔT

J

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

APT34F100B2_L