DRF1301

MOSFET Absolutes Maximum Ratings (Per-Section)

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain Source Voltage

1000

V

I

D

Continuous Drain Current T

15

A

R

DS(on)

Drain-Source On State Resistance

1

Ω

T

jmax

Operating Temperature

175

°C

MOSFET Dynamic Characteristics (Per-Section)

Section A and B Output Switching Performance

Symbol

Characteristic

Min

Typ

Max

Unit

T

ON

Leading Edge 10% to 90%

2

3

4

ns

T

OFF

Trailing Edge 10% to 90%

45

TBD

49

T

DLY(ON)

Total Throughput Delay Time, ON

45

TBD

47

T

DLY(OFF)

Total Throughput Delay Time, OFF

49

50

51

∆T

DLY(ON)

Delta T

-0.5

0

1.5

∆T

DLY(OFF)

Delta T

0

0.6

1.3

Symbol

Parameter

Min

Typ

Max

Unit

C

ISS

Input Capacitance

1800

pF

C

oss

Output Capacitance

335

C

rss

Reverse Transfer Capacitance

75

MOSFET Thermal Characteristics (Total Package)

Symbol

Parameter

Min

Type

Max

Unit

Junction to Case Thermal Resistance

.06

°C/W

Junction to Heat Sink Thermal Resistance

.14

T

JSTG

Storage Junction Temperature

-55 to 150

°C

P

DHS

Maximum Power Dissipation @ T

1.07

KW

P

DC

Total Power Dissipation @ T

2.5

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Driver Output Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

C

out

Output Capacitance

2500

pF

R

out

Output Resistance

.8

Ω

L

out

Output Inductance

3

nH

F

MAX

Operating Frequency CL = 3000nF + 50Ω

30

MHz

F

MAX

Operating Frequency RL = 50Ω

50

Symbol

Parameter

Min

Typ

Max

Unit

Thermal Resistance Junction to Case

1.5

°C/W

Thermal Resistance Junction to Heat Sink

2.5

T

JSTG

Storage Temperature

-55 to 150

°C

P

DJHS

Maximum Power Dissipation @ T

60

W

P

DJC

Total Power Dissipation @ T

100

Driver Thermal Characteristics