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MMBT591 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT591 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Any changing of specification will not be informed individual MMBT591 PNP Silicon General Purpose Transistor 10A 1A 10mA 100mA 1mA VCE(sat) v IC IC-Collector Current IC-Collector Current VCE(sat) v IC 1mA 0 0.1 100mA 10mA 0.2 0.3 0.4 0.5 10A 1A 0 0.6 0.1 0.2 0.3 0.4 0.5 0.6 IC-Collector Current VBE(sat) v IC 0 0.2 100mA 10mA 0.4 0.6 0.8 1.0 10A 1A hFE V IC IC-Collector Current 1mA 100mA 10mA 10A 1A 100 0 300 200 400 10mA 1mA IC-Collector Current 100mA 1A 10A 0.6 0.8 1.0 1.2 0.4 0.2 0 10 1 0.1 VCE- Collector Emitter Voltage (V) 0.1V 10V 100V 1V 1mA 0.01 +25C o IC/IB=10 IC/IB=50 IC/IB=10 +25C o -55C o +100C o +25C o -55C o +100C o +25C o -55C o +100C o -55C o +25C o +100C o IC/IB=10 VCE=5V VCE=5V DC 1s 100ms 10ms 1ms 100us http://www.SeCoSGmbH.com Elektronische Bauelemente TYPICAL CHARACTERISTICS V BE(on) v IC S afe Operating Area |
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