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MMBT2907Q 데이터시트(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

부품명 MMBT2907Q
상세설명  General Purpose Transistor
PDF  3 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT2907Q 데이터시트(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

  MMBT2907Q Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MMBT2907Q Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH MMBT2907Q Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
MMBT2907Q
PNP Silicon
General Purpose Transistor
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, Frequency (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, Source Resistance (OHMS)
f = 1.0 kHz
IC = –50 µA
–100
µA
–500
µA
–1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
10
8.0
6.0
4.0
2.0
0
50
100
200
500 1.0 k
2.0 k
5.0 k 10 k
20 k
50 k
IC = –1.0 mA, Rs = 430 Ω
–500
µA, Rs = 560 Ω
–50
µA, Rs = 2.7 kΩ
–100
µA, Rs = 1.6 kΩ
Figure 9. Capacitances
Reverse Voltage (VOLTS)
30
Figure 10. Current–Gain — Bandwidth Product
IC, Collector Current (mA)
–0.1
2.0
Figure 11. “On” Voltage
IC, Collector Current (mA)
–1.0
Figure 12. Temperature Coefficients
IC, Collector Current (mA)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
RqVC for VCE(sat)
20
10
7.0
5.0
3.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
400
300
200
100
80
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
–0.8
–0.6
–0.4
–0.2
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
–500
+0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
Ceb
Ccb
VCE = –20 V
TJ = 25°C
RqVB for VBE
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
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