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SCG3019 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCG3019 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente 04-May-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-523 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. EQUIVALENT CIRCUIT MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 0.1 A Total Power Dissipation PD 0.15 W Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Thermal Resistance, Junction to Ambient RθJA 833 °C / W DEVICE MARKING KN REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.50 1.70 K 0.30 0.50 B 0.75 0.95 M --- 10 o C 0.60 0.80 N --- 10 o D 0.23 0.33 S 1.50 1.70 G 0.50BSC J 0.10 0.20 |
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