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SCS0240DF 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 SCS0240DF
상세설명  Silicon Epitaxial Planar Schottky Barrier Rectifiers
PDF  2 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCS0240DF 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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SCS0240DF
0.2 A, 40 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
Elektronische Bauelemente
08-Dec-2010 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Anode

Cathode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
●
Low turn-on voltage
●
Fast switching
●
PN junction guard for transient and ESD protection
●
Designed for surface mount application
●
Plastic material-UL recognition flammability
classification 94V-O
APPLICATION
●
Surface mount fast switching diode
PACKAGE INFORMATION
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C)
Parameter
Symbol
Limits
Unit
Peak repetitive peak reverse voltage
VRRM
40
V
Working peak reverse voltage
VRWM
40
V
DC reverse voltage
VR
40
V
Forward continuous current
IF
200
mA
Peak forward surge current @ < 1.0 s
IFSM
600
mA
Power Dissipation
Pd
200
mW
Thermal resistance junction to ambient
RθJA
625
℃
/ W
Junction, Storage Temperature Range
TJ, TSTG
-55 ~ +125
℃
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
-
V
IR= 10A
Forward Voltage
VF
-
-
0.38
V
IF = 1.0mA
-
-
0.5
IF = 10mA
-
-
1.0
IF = 40mA
Reverse Current
IR
-
20
200
nA
VR = 30V
Capacitance between terminals
CT
-
4
5
pF
VR = 0V, f=1.0MHz
Reverse Recovery Time
TRR
-
-
5
ns
IF =IR= 10mA,
RL=100Ω
Product
Marking Code
SCS0240DF
43
DFN1006-2
C
A
B
E
D
H
F
F
G
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
0.55
0.675
E
0.20
0.30
B
0.95
1.075
F
0.05REF
C
0.47
0.53
G
0.45
0.55
D
0
0.05
H
0.65TYP


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