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SDF920NE 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SDF920NE 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 20-Apr-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2x5 saves board space Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ Leader Size DFN2x5 5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1 TA = 25°C ID 11 A TA = 70°C 8.5 A Pulsed Drain Current 2 IDM ±40 A Continuous Source Current (Diode Conduction) 1 IS 3.1 A Total Power Dissipation 1 TA = 25°C PD 3.5 W TA = 70°C 1.8 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec RθJA 36 °C / W Steady State 76 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.70 0.80 I 2.00 BSC B 0.00 0.06 J 1.30 1.55 C 0.10 0.20 K 2.60 2.86 D0° 12° L 1.67 BSC E 5.00 BSC M 0.15 BSC F 4.50 BSC N 0.40 0.60 G 0.50 BSC O 0.00 0.10 H 0.20 0.30 DFN2x5 B C A I J K L M N O E D F G H 2KV |
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