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SEF112B 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SEF112B 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Elektronische Bauelemente SEF112B VOLTAGE 1200 V 1.0 A High Voltage Ultrafast Rectifier 01-June-2002 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES 0.001 0.01 0.1 1 10 1200 300 600 900 1500 1 Reverse Voltage(V) Typical Reverse Characteristic 25℃ 50℃ 100℃ 75℃ 125℃ 0.1 0.01 0.1 1 10 Forward Voltage (V) Typical Forward Characteristic 0.35 0.7 1.05 1.4 1.75 2.1 25℃ 50℃ 100℃ 75℃ 125℃ Maximum Non- Repetitive Forward Surge Current Number of Cycles at 60Hz 0 5 10 15 20 25 1 10 100 8.3mS Single half Sine Wave JEDEC Method Tj=25℃ Revise Voltage (V) Typical Junction Capacitance 0 4 8 16 0 1 10 100 |
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