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IRF9130SMD 데이터시트(PDF) 2 Page - Seme LAB

부품명 IRF9130SMD
상세설명  P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
PDF  2 Pages
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제조업체  SEME-LAB [Seme LAB]
홈페이지  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRF9130SMD 데이터시트(HTML) 2 Page - Seme LAB

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IRF9130SMD
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 09/00
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 5A
VGS = 10V
ID = 8A
VDS = VGS
ID = 250mA
VDS ³ 15V
IDS = 5A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 8A
VDS = 0.5BVDSS
ID = 8A
VDS = 0.5BVDSS
VDD = 50V
ID = 8A
RG = 7.5W
IS = 8A
TJ = 25°C
VGS = 0
IS = 8A
TJ = 25°C
di / dt £ 100A/msVDD £ 50V
ELECTRICAL CHARACTERISTICS (T
C = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.35
0.4
24
3
25
250
100
-100
860
350
125
12.5
29
1.0
6.3
227
60
140
140
140
8
32
4.7
300
3
8.7
8.7
V
V/°C
W
V
S(
W
mA
nA
pF
nC
nC
ns
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
LD
LS
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS



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