VRF151EMP datasheet(2/5 Pages) MICROSEMI

2 / 5 page

100

VRF151E(MP)

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISS

Input Capacitance

GS = 0V

375

oss

Output Capacitance

DS = 150V

200

rss

Reverse Transfer Capacitance

f = 1MHz

Class A Characteristics

Symbol

Test Conditions

Min

Typ

Max

Unit

f = 30MHz, V

DD = 50V, IDQ = 250mA, Pout = 150WPEP

IMD

(d3)

f = 30MHz, V

DD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP

-50

IMD

(d9-d13)

f = 30MHz, V

DD = 50V, IDQ = 250mA, Pout = 150WPEP

-75

Functional Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP

f = 175MHz, V

DD = 50V, IDQ = 250mA, Pout = 150W

1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP

IMD

(d3)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP

-30

dBc

IMD

(d11)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP

-60

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP

30:1 VSWR - All Phase Angles

No Degradation in Output Power

1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

0.1

100

250

iss

DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 1, Output Characteristics

J= 125°C

DS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 3, Capacitance vs Drain-to-Source Voltage

DS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 4, Forward Safe Operating Area

10V

14V

GS, GATE-TO-SOURCE VOLTAGE (V)

FIGURE 2, Transfer Characteristics

250μs PULSE

TEST<0.5 % DUTY

CYCLE

J= -55°C

J= 25°C

oss

rss

Rds(on)

DC line

DMax

= 125°C

= 75°C

Typical Performance Curves

Pdmax

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