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SID9971 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SID9971
상세설명  N-Channel EnhancementMode PowerMos.FET
PDF  4 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID9971 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by safe operating area.
1.
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
37
38
VSD
IS=25 A, VGS=0V.
V
1.2
_
_
IS=18A, VGS=0V.
dl/dt=100A/us
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
_
_
2
2.Pulse width 300us, dutycycle 2%.
≦
≦
18
6
11
9
24
26
7
1700
160
110
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=30V
ID=18A
VGS=10V
RG=3.3
RD=1.67
Ω
Ω
ID=18A
VDS=48V
VGS= 4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
30
36
50
m
17
Ω
VGS=10V, ID=18A
VGS=4.5V, ID=12A
_
_
S
VDS=10V, ID=18A
_
_
_
_
2700
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-Source On-Resistance
Forward Transconductance
Gfs
2
2
RDS(ON)
60
0.05
1.0
3.0
100
1
25
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=250uA
VGS= 20V
±
VDS=60V,VGS=0
VDS=48V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
oC
oC
Source-Drain Diode
Elektronische Bauelemente
SID9971
25A, 60V,RDS(ON)36 m
N-Channel Enhancement Mode Power Mos.FET
Ω
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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