IRFM datasheet(2/2 Pages) SEME-LAB

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IRFM

Parameter

Test Conditions

Min.

Typ.

Max

VGS = 0

ID = 1mA

Reference to 25°C

ID = 1mA

VGS = 10V

ID = 17A

VGS = 10V

ID = 27.4A

VDS = VGS

ID = 250mA

VDS ³ 15V

IDS = 27.4A

VGS = 0

VDS = 0.8BVDSS

TJ = 125°C

VGS = 20V

VGS = –20V

VGS = 0

VDS = 25V

f = 1MHz

VGS = 10V

ID = 27.4A

VDS = 0.5BVDSS

VDD = 100V

ID = 27.4A

RG = 2.35W

IS = 27.4A

TJ = 25°C

VGS = 0

IF = 27.4A

TJ = 25°C

di / dt £ 100A/msVDD £ 50V

ELECTRICAL CHARACTERISTICS (T

J = 25°C unless otherwise stated)

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance 2

Gate Threshold Voltage

Forward Transconductance 2

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Drain – Case Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn– On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current 1

Diode Forward Voltage 2

Reverse Recovery Time 2

Reverse Recovery Charge 2

Forward Turn–On Time

200

0.28

0.100

0.105

250

100

–100

3500

700

110

115

822

190

170

130

27.4

110

1.9

950

9.0

Negligible

8.7

BVDSS

DBVDSS

DTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Ciss

Coss

Crss

CDC

Qgs

Qgd

td(on)

td(off)

ISM

VSD

trr

Qrr

ton

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance Measured from 6mm down drain lead to centre of die

Internal Source Inductance Measured from 6mm down source lead to source bond pad

PACKAGE CHARACTERISTICS

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