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SMF102MH 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMF102MH 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() SMF101MH ~ SMF107MH 50 ~ 1000 V 1.0 Amp Surface Mount Silicon Fast Recovery Rectifiers Elektronische Bauelemente 03-Dec-2010 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) PARAMETERS SYMBOL PART NUMBERS UNITS SMF 101MH SMF 102MH SMF 103MH SMF 104MH SMF 105MH SMF 106MH SMF 107MH Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum Continuous reverse voltage VR 50 100 200 400 600 800 1000 V Maximum Instantaneous Forward Voltage VF 1.30 V Maximum average forward rectified current @ TA=55°C IO 1.0 A Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 25 A Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C IR 5.0 A @TA=100°C 100 Diode Junction Capacitance (Note 1) CJ 15 pF Maximum Reverse Recovery Time Trr 150 250 500 nS Thermal resistance Junction to ambient RθJA 42 °C / W Operating Temperature TJ -65 ~ 150 °C Storage Temperature TSTG -65 ~ 175 °C NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. |
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