SS8550 datasheet(1/2 Pages) SECOS

부품명	SS8550

상세설명	PNP Silicon General Purpose Transistor

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

SS8550

PNP Silicon

General Purpose Transistor

01-June-2005 Rev. B

Page 1 of 2

FEATURES

Power dissipation

PCM : 0.3 W

Collector Current

ICM : - 1.5 A

Collector-base voltage

V(BR)CBO : - 40 V

Operating & storage junction temperature

TJ, TSTG : - 55°C ~ + 150°C

ELECTRICAL CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

Ic = 100μA, IE = 0

BVCEO

-25

-

V

Ic = -0.1mA, IB = 0

BVEBO

-5

-

V

IE = -100μA, IC = 0

ICBO

-

-0.1

μA

VCB = -40 V, IE = 0

ICEO

-

-0.1

μA

VCE = -20V, IB = 0

IEBO

-

-0.1

μA

VEB = -5V, IC = 0

VCE(sat)

-

0.5

V

IC = -800 mA, IB = -80mA

VBE(sat)1

-

1.2

V

IC = -800 mA, IB = -80mA

*hFE1

120

-

350

-

VCE= -1V, IC=-100mA

*hFE2

40

-

VCE = -1V, IC = -800mA

fT

100

-

MHz

VCE = -10V, IC = -50mA, f = 30MHz

COB

-

20

pF

VCB= -10V, IE=0, f=1MHz

CLASSIFICATION OF hFE(1)

Rank

L

H

J

Range

120 - 200

200-350

300-400

Marking

Y2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

Collector

3

1

Base

2

Emitter

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