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SSF1331P 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSF1331P
상세설명  P-Channel MOSFET
PDF  4 Pages
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SSF1331P 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSF1331P
-1.5A, -30V, RDS(on) 0.112Ω
P-Channel MOSFET
Elektronische Bauelemente
17-Jun-2010 Rev. A
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
STATIC CARACTERISTICS
Gate-Threshold Voltage
VGS(th)
-1
-
-
V
VDS= VGS, ID = -250μA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±20V
Zero Gate Voltage Drain Current
IDSS
-
-
-1
μA
VDS= -24V, VGS= 0V
-
-
-10
VDS= -24V, VGS= 0V, TJ= 55°C
On-State Drain Current
a
ID(on)
-5
-
-
A
VDS= -5V, VGS= -10V
Drain-Source On-Resistance
a
RDS(ON)
-
-
112
mΩ
VGS= -10V, ID= -1.5A
-
-
172
VGS= -4.5V, ID= -1.2A
Forward Transconductance
a
gFS
-
9
-
S
VDS= -5V, ID= -1.5A
Diode Forward Voltage
VSD
-
-0.65
-
V
IS= -0.46A, VGS= 0V
DYNAMIC CHARACTERISTICS
b
Total Gate Charge
Qg
-
7.2
-
nC
VDS= -10V
VGS= -5V
ID= -1.5A
Gate-Source Charge
Qgs
-
1.7
-
Gate-Drain Charge
Qgd
-
1.5
-
Turn-on Delay Time
Td(ON)
-
10
-
nS
VDD= -10V
IL= -1A
VGEN= -4.5V
RG= 6Ω
Rise Time
TR
-
9
-
Turn-off Delay Time
Td(OFF)
-
27
-
Fall Time
TF
-
11
-
Notes:
a.
Pulse test:PW ≦ 300us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Repetitive rating, pulse width limited by junction temperature.



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