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STT3402N 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3402N 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 19-Nov-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TYPICAL APPLICATIONS Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Gate Charge. Fast Switch. Miniature TSOP-6 Surface Mount Package Saves Board Space. PRODUCT SUMMARY STT3402N VDS(V) RDS(on) (m ID(A) 30 0.027@VGS= 10V 6.3 0.035@VGS= 4.5V 5.5 PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Maximum Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA= 25°C ID 6.3 A TA= 70°C 5.2 Pulsed Drain Current 2 IDM ±20 A Continuous Source Current (Diode Conduction) 1 IS 1.3 A Power Dissipation 1 TA= 25°C PD 1.6 W TA= 70°C 1.0 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction to Ambient 1 t ≦ 5 sec RJA 78 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 D G D D D S |
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