C9014 datasheet(1/1 Pages) KEC

부품명	C9014

상세설명	EPITAXIAL PLANAR NPN TRANSISTOR

PDF	1 Pages

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제조업체	KEC [KEC(Korea Electronics)]

홈페이지	http://www.keccorp.com

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1 / 1 page

2010. 3. 22

1/1

SEMICONDUCTOR

TECHNICAL DATA

KTC9014

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Excellent h

FE Linearity

: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).

・Low Noise :NF=1dB(Typ.) at f=1kHz.

・Complementary to KTC9015.

MAXIMUM RATING (Ta=25℃)

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification A:60～150, B:100～300, C:200～600, D:400～1000

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=50V, IE=0

-

50

nA

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

100

nA

DC Current Gain

hFE (Note)

VCE=5V, IC=1mA

60

-

1000

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

-

0.1

0.25

V

Transition Frequency

fT

VCE=10V, IC=1mA, f=100MHz

60

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

2.0

3.5

pF

Noise Figure

NF

VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz

-

1.0

10

dB

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Emitter Current

IE

-150

mA

Collector Power Dissipation

PC*

625

mW

400

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

* Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

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