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MMBT2222AW 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 MMBT2222AW
상세설명  NPN Silicon General Purpose Transistor
PDF  4 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT2222AW 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  MMBT2222AW Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MMBT2222AW Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH MMBT2222AW Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH MMBT2222AW Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
MMBT2222AW
NPN Silicon
General Purpose Transistor
20-Oct-2009 Rev. C
Page 2 of 4
ELECTRICAL CHARACTERISTICS at Ta = 25°C
CHARACTERISTIC
TEST CONDITION
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
IC=10μA, IE=0
V(BR)CBO
75
V
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
V(BR)CEO
40
V
Emitter=Base Breakdown Voltage
IE=-10μA, IC=0
V(BR)EBO
6
V
Collector Cutoff Current
VCB=70V, IE=0
ICBO
100
nA
Collector Cutoff Current
VEB=35V, IC=0
ICEO
100
nA
Emitter Cutoff Current
VEB=3V, IC=0
IEBO
100
nA
VCE=10V, IC=-0.1mA
hFE1
35
VCE=10V, IC=1mA
hFE2
50
VCE=10V, IC=10mA
hFE3
75
VCE=10V, IC=150mA
hFE4
100
300
VCE=10V, IC=500mA
hFE5
40
DC Current Gain
VCE=1V, IC=500mA
hFE6
35
IC=500mA, IB=50mA
VCE(sat)
1
V
Collector-emitter Saturation Voltage
IC=150mA, IB=15mA
VCE(sat)
0.3
V
IC=500mA, IB=50mA
VBE(sat)
2.0
V
Base-Emitter Saturation Voltage
IC=150mA, IB=15mA
VBE(sat)
1.2
V
Transition Frequency
VCE=20V, IC=20mA, f=1MHz
fT
300
MHz
Output Capacitance
VCB=10V, IE=0, f=1MHz
Cob
8
pF
Delay Time
Td
10
nS
Rise Time
Vcc=30V, VBE(Off)=-0.5V
IC=150mA, IB1=15mA
Tr
25
nS
Storage Time
TS
225
nS
Fall Time
Vcc=30V, IC=150mA
IB1=- IB2 =15mA
TF
60
nS



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