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MMBT4401 데이터시트(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH

부품명 MMBT4401
상세설명  NPN Silicon Switching Transistor
PDF  5 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT4401 데이터시트(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
MMBT4401
NPN Silicon
Switching Transistor
6.0
8.0
10
0
4.0
2.0
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
Figure 9. Frequency Effects
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
IC = 1.0 mA, RS = 150 Ω
IC = 500 µA, RS = 200 Ω
IC = 100 µA, RS = 2.0 kΩ
IC = 50 µA, RS = 4.0 kΩ
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100 k
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
6.0
8.0
10
0
4.0
2.0
Figure 10. Source Resistance Effects
f = 1.0 kHz
IC = 50 µA
IC = 100 µA
IC = 500 µA
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 255C
This group of graphs illustrates the relationship between
hfe and other ªhº parameters for this series of transistors. To
obtain these curves, a high±gain and a low±gain unit were
selected from the MMBT4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
Figure 11. Current Gain
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
100
200
20
70
50
300
Figure 12. Input Impedance
50 k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
Figure 13. Voltage Feedback Ratio
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
0.2
10
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
IC, Collector Current (mA)
IC, Collector Current (mA)
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
Figure 14. Output Admittance
IC, Collector Current (mA)
IC, Collector Current (mA)
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
RS, Source Resistance (OHMS)
f, Frequency (kHz)
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2004 Rev. B
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