PZT4672 datasheet(1/2 Pages) SECOS

부품명	PZT4672

상세설명	Epitaxial Planar Transistor

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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PZT4672

NPN Transistor

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

The PZT4672 is designed for low

frequency amplifier applications.

4 6 7 2

Features

*Excellent DC Current Gain Characteristic

*Low Saturation Voltage, Typically

VCE(sat)=0.1V at IC/IB=1A/50mA

Description

Date Code

B

C

E

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC= 50

VEB=5V,IC=0

µA,IE=0

IC= 1mA,IB=0

IE= 50µA,IC=0

VCB= 60V,IE=0

IC=

VCE= V, IC=

VCE= V, IC= 500mA,f=100MHz

VCB=10 , f=1MHz,IE=0

*BVCEO

50

-

V

BVEBO

-

V

ICBO

-

100

nA

-

VCE(sat)

-

hFE

*

fT

-

MH

Cob

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

60

6

0.1

0.35

100

V

1A,IB=50mA

2

500mA

2

V

C

120

-

210

400

25

*Pulse width 380 s, Duty Cycle 2%

≦

µ

*

-

o

IEBO

Emitter-Base Cutoff Current

-

nA

MAXIMUM RATINGS

Symbol

Parameter

Value

Collector Current (DC)

6

2

55~+150

50

60

2

5

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

ABSOLUTE

Ta=25C

o

Collector Current (Pulse PW=10ms)

Classification of hFE

Rank

A

B

120~240

200~400

Range

5

1.40

1.80

Mi

llimeter

Mi

llimeter

SOT-223

01-Jun-2002 Rev. A

Page 1 of 2

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

유사한 부품 번호 - PZT4672

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