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UP2855L-AA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UP2855L-AA3-R
상세설명  PNP MEDIUM POWER LOW SATURATION TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2855L-AA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UP2855
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R207-024.b
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current (Note 1)
IC
-4
A
Peak Pulse Current
ICM
-10
A
3.0 (Note 1)
Power Dissipation
PD
1.6 (Note 2)
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCE
PARAMETER
SYMBOL
RATINGS
UNIT
42 (Note 1)
Junction to Ambient
θJA
78 (Note 2)
°C/W
Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided
2oz copper, in still air conditions.
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided
1oz copper, in still air conditions.
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
VCBO
IC=-100μA
-180
-200
V
Collector-Emitter Breakdown Voltage
VCER
IC=-1μA, RB≤1kΩ
-180
-200
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-10mA (Note 1)
-140
-160
V
Emitter-Base Breakdown Voltage
VEBO
IE=-100μA
-7.0
-8.0
V
VCB=-150V
<1
-20
nA
Collector Cut-Off Current
ICBO
VCB=-150V, Tamb=100°C
-0.5
μA
<1
-20
nA
Collector Cut-Off Current
ICER
VCB=-150V,
R≤1kΩ
Tamb=100°C
-0.5
μA
Emitter Cut-Off Current
IEBO
VEB=-6V
<1
-10
nA
IC=-0.1A, IB=-5mA
-40
-60
mV
IC=-0.5A, IB=-50mA
-55
-80
mV
IC=-1A, IB=-100mA
-85
-120
mV
Collector-Emitter Saturation Voltage
(Note 1)
VCE(SAT)
IC=-3A, IB=-300mA
-275
-360
mV
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-3A, IB=-300mA(Note 1)
-940
-1040
mV
Base-Emitter Turn-On Voltage
VBE(ON)
IC=-3A, VCE=-5V (Note 1)
-830
-930
mV
IC=-10mA, VCE=-5V
100
225
IC=-1A, VCE=-5V
100
200
300
IC=-3A, VCE=-5V
45
100
Static Forward Current Transfer
Ratio (Note 1)
hFE
IC=-10A, VCE=-5V
5
Transition Frequency
fT
IC=-100mA, VCE=-10V
f=50MHz
120
MHz
Output Capacitance (Note 1)
COBO
VCB=-10V, f=1MHz
33
pF
tON
42
Switching Times
tOFF
IC=-1A, VCC=-50V,
IB1=-IB2=-10mA
636
ns
Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%.



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