| 전자부품 데이터시트 검색엔진 |
|
PDMB150B12C2 데이터시트(PDF) 3 Page - Nihon Inter Electronics Corporation |
|
|
|||||||||||||||||||||||||||||
PDMB150B12C2 데이터시트(HTML) 3 Page - Nihon Inter Electronics Corporation |
|
3 / 3 page ![]() 日本インター株式会社 QS043-401M0060 (4/4) PDMB150B12 PDMB150B12C 1 2 5 10 20 50 100 200 0.05 0.1 0.2 0.5 1 2 5 10 Series Gate Impedance RG (Ω) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=600V IC=150A VGE=±15V TC=25℃ tf tr ton toff 01 2 3 4 0 50 100 150 200 250 300 Forward Voltage VF (V) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25℃ TC=125℃ 0 150 300 450 600 750 900 2 5 10 20 50 100 200 500 -di/dt (A/μs) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=150A TC=25℃ 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 Time t (s) Fig.11- Transient Thermal Impedance TC=25℃ 1 Shot Pulse FRD IGBT 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 Collector to Emitter Voltage V CE (V) Fig.10- Reverse Bias Safe Operating Area RG=3.0Ω VGE=±15V TC≦125℃ |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |