DP0150ALP4-7 datasheet(2/5 Pages) DIODES

2 / 5 page

DP0150ALP4 / DP0150BLP4

Document number: DS31493 Rev. 4 - 2

2 of 5

www.diodes.com

January 2011

DP0150ALP4 / DP0150BLP4

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current - Continuous

-100

Peak Pulse Collector Current

ICM

-200

Base Current

-30

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

450

Thermal Resistance, Junction to Ambient (Note 4)

RθJA

278

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

-50

—

IC = -10μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 5)

V(BR)CEO

-50

—

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

—

IE = -10μA, IC = 0

Collector Cut-Off Current

ICBO

—

-0.1

μA

VCB = -50V, IE = 0

Emitter Cut-Off Current

IEBO

—

-0.1

μA

VEB = -5V, IC = 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-0.15

-0.3

IC = -100mA, IB = -10mA

DC Current Gain

DP01510ALP4

DP01510BLP4

hFE

120

—

240

—

VCE = -6V, IC = -2mA

200

—

400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

—

MHz

VCE = -10V, IE = 1mA

f = 30MHz

Output Capactiance

Cob

—

1.6

—

VCB = -10V, IE = 0,

f = 1MHz

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤2%

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