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2SCR372P 데이터시트(PDF) 1 Page - Rohm |
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2SCR372P 데이터시트(HTML) 1 Page - Rohm |
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1 / 5 page ![]() Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (120V / 700mA) 2SCR372P Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features Low saturation voltage VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA) Applications Driver Inner circuit(Unit : mm) Package Taping Code T100 Basic ordering unit (pieces) 1000 2SCR372P hFE values are classified follows : Item Q R hFE 120 to 270 180 to 390 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 6V DC IC 0.7 A Pulsed ICP 1.4 A PD 0.5 W PD 2W Junction temperature Tj 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm) Packaging specifications Type Parameter Collector current Power dissipation MPT3 (1) (2) (3) *1 *2 *3 Abbreviated symbol : GX (1) Base (2) Collector (3) Emitter (1) (3) (2) (1) Base (2) Collector (3) Emitter 1/4 2011.04 - Rev.A |
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