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2SCR533D 데이터시트(PDF) 1 Page - Rohm |
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2SCR533D 데이터시트(HTML) 1 Page - Rohm |
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1 / 6 page ![]() www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching Applications Driver Inner circuit (Unit : mm) Package CPT3 Code TL Basic ordering unit (pieces) 2500 Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6V DC IC 3A Pulsed ICP 6A PD 1W PD 10 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate *3 TC=25°C Packaging specifications Type Parameter Collector current Power dissipation CPT3 (SC-63) <SOT-428> 6.5 2.3 (2) (3) 0.65 (1) 0.75 2.3 0.9 5.1 2.3 0.5 1.0 0.5 *1 *2 *3 (1) Base (2) Collector (3) Emitter (1) Base (2) Collector (3) Emitter (1) (3) (2) 1/5 2010.12 - Rev.A |
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