Copyright © 2011 Future Technology Devices International Limited

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Document Reference No.: FT_000401

USB 2.0 HI-SPEED TO MPSSE CABLE Datasheet

Version 1.0

Clearance No.: FTDI# 214

3.3.1 C232HM-DDHSL-0 and C232HM-EDHSL-0 I/O Characteristics

Parameter

Description

Minimum

Typical

Maximum

Units

Conditions

Voh

Output Voltage High

2.40

3.14

V

Ioh = +/-2mA

I/O Drive strength* = 4mA

3.20

V

I/O Drive strength* = 8mA

3.22

V

I/O Drive strength* =

12mA

3.22

V

I/O Drive strength* =

16mA

Vol

Output Voltage Low

0.18

0.40

V

Iol = +/-2mA

I/O Drive strength* = 4mA

0.12

V

I/O Drive strength* = 8mA

0.08

V

I/O Drive strength* =

12mA

0.07

V

I/O Drive strength* =

16mA

Vil

Input low Switching

Threshold

-

0.80

V

LVTTL

Vih

Input High Switching

Threshold

2.00

-

V

LVTTL

Vt

Switching Threshold

1.50

V

LVTTL

Vt-

Schmitt trigger negative

going threshold voltage

0.80

1.10

-

V

Vt+

Schmitt trigger positive

going threshold voltage

1.60

2.00

V

Rpu

Input pull-up resistance

40

75

190

KΩ

Vin = 0

Rpd

Input pull-down

resistance

40

75

190

KΩ

Vin =VCCIO

Iin

Input Leakage Current

15

45

85

μA

Vin = 0

Ioz

Tri-state output leakage

current

±10

μA

Vin = 5.5V or 0

Table 3.7 C232HD-DDHSP-0 and C232HD-EDHSP-0 I/O Pin Characteristics

* The I/O drive strength and slow slew-rate are configurable in the EEPROM.

The I/O pins are +3.3v cells, which are +5V tolerant