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MP6X12 데이터시트(PDF) 1 Page - Rohm |
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MP6X12 데이터시트(HTML) 1 Page - Rohm |
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1 / 6 page ![]() www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (50V / 1A) MP6X12 Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching Applications Driver Inner circuit Package MPT6 Code TR Basic ordering unit (pieces) 1000 Absolute maximum ratings (Ta = 25 C) <It is the same ratings for the Tr.1 and Tr.2> Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6V DC IC 1A Pulsed ICP 2A PD 2.0 W/Total PD 1.4 W/Element Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. Power dissipation Packaging specifications Type Parameter Collector current MPT6 (1) (2) (3) (6) (5) (4) *1 *2 *2 (1) (2) (3) (4) (5) (6) (1) Tr.1 Emitter (2) Tr.1 Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr.1 Collector (1) Tr.1 Emitter (2) Tr.1 Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr.1 Collector 1/5 2010.11 - Rev.A |
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