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Midium Power Transistors (±50V / ±1A)

MP6Z12



Structure



Dimensions (Unit : mm)

NPN/PNP Silicon epitaxial planar transistor



Features

1) Low saturation voltage, typically

2) High speed switching



Applications



Inner circuit (Unit : mm)

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta = 25

C)

　

<Tr.1>

Symbol

Limits

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

6V

DC

1A

Pulsed

2A

　

<Tr.2>

Symbol

Limits

Unit

Collector-base voltage

-50

V

Collector-emitter voltage

-50

V

Emitter-base voltage

-6

V

DC

-1

A

Pulsed

-2

A

　

<Tr.1 and Tr.2>

Symbol

Limits

Unit

2.0

W/Total

1.4

W/Element

Junction temperature

150

C

Range of storage temperature

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.

Parameter

Low Frequency Amplifier

Driver



Packaging specifications

Type

Parameter

Collector current

Power dissipation

Parameter

Collector current

*1

*2

*2

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

*1

MPT6

(Dual)

(1)

(2)

(3)

(6)

(5)

(4)

(1)

(2)

(3)

(4)

(5)

(6)

Tr.1

Tr.2

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

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2010.11 - Rev.A