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LH28F008SA 데이터시트(PDF) 21 Page - Sharp Corporation

부품명 LH28F008SA
상세설명  8M (1M 횞 8) Flash Memory
PDF  27 Pages
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제조업체  SHARP [Sharp Corporation]
홈페이지  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH28F008SA 데이터시트(HTML) 21 Page - Sharp Corporation

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8M (1M × 8) Flash Memory
LH28F008SA
21
AC CHARACTERISTICS - Write Operations1
SYMBOL
PARAMETER
LH28F008SA-857
V
CC ± 5%
LH28F008SA-858
V
CC ± 10%
LH28F008SA-128
V
CC ± 10%
UNIT
NOTE
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
t
AVAV
t
WC
Write Cycle Time
85
90
120
ns
t
PHWL
t
PS
PWD High Recovery to WE
Going Low
1
1
1
µs
2
t
ELWL
t
CS
CE
» Setup to WE Going Low
10
10
10
ns
t
WLWH
t
WP
WE Pulse Width
40
40
40
ns
t
VPWH
t
VPS
V
PP Setup to WE Going High
100
100
100
ns
2
t
AVWH
t
AS
Address Setup to WE
Going High
40
40
40
ns
3
t
DVWH
t
OS
Data Setup to WE
Going High
40
40
40
ns
4
t
WHDX
t
DH
Data Hold from WE High
5
5
5
ns
t
WHAX
t
AH
Address Hold from WE High
5
5
5
ns
t
WHEH
t
OH
OE
» Hold from WE High
10
10
10
ns
t
WHWL
t
WHP
WE Pulse Width High
30
30
30
ns
t
WHRL
WE High to RY
»/BY» Going
Low
100
100
100
ns
t
WHQV
1
Duration of Byte Write
Operation
666
µs
t
WHQV
2
Duration of Block Erase
Operation
0.3
0.3
0.3
s
t
WHGL
Write Recovery before Read
0
0
0
µs
t
QVVL
t
VPH
V
PP Hold from Valid SRD,
RY
»/BY » High
000
ns
NOTES:
1. Read timing characteristics during erase and byte write operations are the same as during read-only operations.
Refer to AC Characteristics for Read-Only Operations.
2. Sampled, not 100% tested.
3. Refer to Command Definitions Table for Valid AIN for byte write or block erasure.
4. Refer to Command Definitions Table for valid DIN for byte write or block erasure.
5. The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard Intel flash
memory, including byte program and verify (byte write) and block precondition, precondition verify, erase and erase verify (block erase).
6. Byte write and block erase durations are measure to completion (SR.7 = 1. RY
  »/BY  » = VOH). VPP should be held at VPPH until determina-
tion of byte write/block erase success (SR.3/4/5 = 0).
7. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
8. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.



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