Features

1 of 5

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

RF3023

BROADBAND MEDIUM POWER SPDT SWITCH

The RF3023 is a GaAs pHEMT single-pole double-throw (SPDT) switch

designed for general purpose switching applications which require very

low insertion loss, moderate isolation, and medium power handling capa-

bility. The RF3023 is ideally suited for battery-powered and low control

voltage applications.



300kHz to 4GHz Operation



0.25dB Insertion Loss at

1GHz



26dB Isolation at 2GHz



1.8V Minimum Control Volt-

age



28dBm P0.1dB at 3V



18dBm P0.1dB at 1.8V



58dBm IP3 at 3V

Applications



Cellular Handset Applications



Antenna Tuning Applications



IEEE 802.11b/g WLAN Appli-

cations



Cellular Infrastructure Appli-

cations

DS101111



Package: SC70, 6-Pin

RF3023

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Insertion Loss

0.25

dB

1GHz

0.3

0.4

dB

2GHz

0.45

dB

3GHz

VSWR

1.15

1GHz

1.2

2GHz

1.33

3GHz

Isolation

26

dB

1GHz

22

26

dB

2GHz

27

dB

3GHz

P1dB

31

dBm

1GHz

32

dBm

2GHz

P0.1dB

28

dBm

1GHz

IP3

60

dBm

1GHz, 1MHz Spacing, 15dBm per tone

58

dBm

2GHz, 1MHz Spacing, 15dBm per tone

40

nS

30

nS

10/90% RF

Test Conditions: 3.0V, 50

, 25°C, with Application Circuit shown herein.