SILICON EPITAXIAL

PLANAR DIODE

1N4148CSM

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 7789

Issue 2

Page 2 of 4

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VBR

Breakdown Voltage

IR = 100µA

100

IF = 10mA

0.8

IF = 100mA

1.2

IF = 10mA

TA = 150°C

0.8

VF

(2)

Forward Voltage

IF = 100mA

TA = -55°C

1.3

V

VR = 20V

25

VR = 75V

500

nA

VR = 20V

35

IR

Reverse Current

VR = 75V

TA = 150°C

75

µA

DYNAMIC CHARACTERISTICS

VR = 0V

4

C

Capacitance

VR = 1.5V

f = 1.0MHz

2.8

pF

IF = IR = 10mA

RL = 100

trr

Reverse Recovery Time

IREC = 1.0mA

5

ns

Notes

Notes

Notes

Notes

(2)

Pulse Width ≤ 300us, δ ≤ 2%