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BFY50 데이터시트(PDF) 2 Page - Seme LAB

부품명 BFY50
상세설명  MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
PDF  2 Pages
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제조업체  SEME-LAB [Seme LAB]
홈페이지  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFY50 데이터시트(HTML) 2 Page - Seme LAB

  BFY50 Datasheet HTML 1Page - Seme LAB BFY50 Datasheet HTML 2Page - Seme LAB  
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Parameter
Test Conditions
Min.
Typ.
Max. Unit
Document Numer 3085
Issue 1
BFY50
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
IC = 100µAIE = 0
IC = 30mA
IB = 0
IC = 0
IE = 100µA
VCB = 60V
IE = 0
TC = 100°C
VEB = 5V
IC = 0
TC = 100°C
IC = 150mA
IE = 15mA
IC = 1A
IB = 0.1A
IC = 150mA
IB = 15mA
IC = 1A
IB = 0.1A
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 1mA
VCE = 10V
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)CEO*
Collector – Emitter Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
80
35
6
50
2.5
50
2.5
0.14
0.2
0.7
1
0.95
1.3
1.5
2
20
40
30
55
15
30
V
nA
µA
nA
µA
V
V
—
hfe
Small Signal Current Gain
hie
Imput Impedance
hrE
Reverse Voltage Ratio
hoe
Output Admittance
Ccbo
Collector -Base Capacitance
fT
Transistion Frequency
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCE = 6V
IC = 1mA
f = 1kHz
VCE = 6V
IC = 10mA
f = 1KHz
VCE = 5V
IC = 10mA
f = 1.KHz
VCE = 5V
IC = 10mA
f = 1.KHz
VCE = 5V
IC = 10mA
f = 1.KHz
VCB = 10V
IE = 0
f = 1.MHz
VCE = 10V
IC = 50mA
IC = 150mA VCC = 10V
IB1= 15mA
VBE = -2V
IC = 150mA VCC = 10V
IB1= -IB2 = 15mA
25
45
180
55 x10.-6
30
10
60
100
15
40
300
60
—
Ω
—
µS
pF
MHz
ns
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Pulse
Duration = 300
µs, Duty Cycle = 1%



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