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TS13002ACTB0 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

부품명 TS13002ACTB0
상세설명  High Voltage NPN Transistor
PDF  5 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
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TS13002ACTB0 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TS13002A
High Voltage NPN Transistor
2/5
Version: E07
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 7V, IC = 0
IEBO
--
--
1
uA
Collector-Emitter Saturation Voltage
IC / IB = 50mA / 10mA
IC / IB = 100mA / 10mA
IC / IB = 200mA / 20mA
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
0.2
0.45
1
0.4
1
1.5
V
Base-Emitter Saturation Voltage
IC / IB = 50mA / 10mA
IC / IB = 100mA / 10mA
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1
1.2
V
DC Current Gain
VCE = 10V, IC = 10mA
VCE = 10V, IC = 100mA
VCE = 10V, IC = 280mA
hFE1
hFE2
hFE3
15
25
12
--
--
--
40
40
24
Dynamic
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Resistive Load Switching Time (Ratings)
Rise Time
tr
--
1.1
--
uS
Storage Time
tSTG
--
2
4
uS
Fall Time
VCC = 125V, IC = 100mA,
IB1 = IB2 = 20mA,
tp = 25uS
Duty Cycle ≤1%
tf
--
0.2
0.7
uS
Note : pulse test: pulse width ≤5mS, duty cycle ≤10%



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