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TSC136LCPRO 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC136LCPRO 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page ![]() TSC136L High Voltage NPN Transistor 2/6 Version: B09 Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage a IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector-Base Cutoff Current VCB = 700V, IE = 0 ICBO -- -- 100 uA Collector-Emitter Cutoff Current VCE = 400V, IB = 0 IEBO -- -- 100 uA IC =0.5A, IB =0.1A VCE(SAT)1 -- -- 0.4 IC =1A, IB =0.25A VCE(SAT)2 -- -- 0.5 Collector-Emitter Saturation Voltage a IC =1.5A, IB =0.5A VCE(SAT)3 -- -- 0.6 V Base-Emitter Saturation Voltage a IC =0.5A, IB =0.1A VBE(SAT) -- -- 1.2 V VCE =10V, IC =500mA hFE 1 20 -- 40 DC Current Gain VCE =5V, IC =2A hFE 2 5 -- -- Frequency VCE = 10V, IC = 0.5A fT 4 -- -- MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 21 -- pF Turn On Time tON -- 0.4 -- uS Storage Time tSTG -- 2.0 -- uS Fall Time VCC = 125V, IC = 1A, IB1 = 0.2A. tf -- 0.16 -- uS Notes: a. Pulsed duration = 300uS, duty cycle ≤1.5% |
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