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STW34NM60N 데이터시트(PDF) 1 Page - STMicroelectronics |
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STW34NM60N 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() March 2011 Doc ID 17740 Rev 3 1/17 17 STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET TO-220, TO-247, TO-220FP Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS RDS(on) max. ID PTOT STF34NM60N STP34NM60N STW34NM60N 600 V 600 V 600 V 0.105 Ω 0.105 Ω 0.105 Ω 29 A 29 A 29 A 40 W 210 W 210 W 1 2 3 1 2 3 TO-247 TO-220 1 2 3 TO-220FP Table 1. Device summary Order codes Marking Package Packaging STF34NM60N STP34NM60N STW34NM60N 34NM60N TO-220FP TO-220 TO-247 Tube www.st.com |
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