PC81410NSZ datasheet(2/5 Pages) SHARP

2 / 5 page

PC8141XNSZ Series

s Electro-optical Characteristics

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Forward voltage

Collector current

Isolation resistance

Floating capacitance

Response time

Common mode rejection voltage

Terminal capacitance

Collector dark current

Emitter-collector breakdown voltage

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Rise time

Fall time

ICEO

BVCEO

BVECO

RISO

VCE (sat)

CMR

Conditions

=±10mA

=±0.5mA, VCE=5V

=±10mA, IC=1mA

=0, f=1kHz

VCE

=50V, IF=0

IC=0.1mA, IF=0

IE=10

µA, IF=0

DC500V 40 to 60%RH

=0, f=1MHz

VCE

=2V, IC=2mA, RL=100Ω

=25°C, RL=470Ω, VCM=1.5kV (peak),

=0mA, VCC=9V, Vnp=100mV

1.4

−

0.25

×1010

×1011

1.2

−

2.0

250

−

0.6

1.0

−

100

−

0.2

−

µs

kV/

µs

Ω

(Ta

=25°C)

*1 Refer to Fig.1.

Fig.2 Forward Current vs. Ambient

Temperature

Fig.1 Test Circuit for Common Mode Rejection Voltage

VCM

Vcp

Vnp

(dV/dt)

Vnp

VCC

VCM

(Vcp Nearly = dV/dt×Cf×RL)

1) Vcp : Voltage which is generated by displacement current in floating

capacitance between primary and secondary side.

VCM : High wave

pulse

RL=470Ω

VCC=9V







Ambient temperature Ta (°C)

−30

100

125

Fig.3 Diode Power Dissipation vs. Ambient

Temperature

Ambient temperature Ta (°C)

−30

100

125

PC81410NSZ 데이터시트(PDF) 2 Page - Sharp Corporation

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