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Document Number 0268041

1.

FEATURES

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Weight: 0.004 ounces, 0.13 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at ２５ ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

V

Peak reverse voltage

V

Average forw ard rectified current

half w ave rectification w ith resistive load

µ s

A

Pow er dissipation

@ T

mW

Junction temperature

Storage temperature range

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage @ I

V

Leakage current

@ V

nA

@ V

T

μA

Capacitance

@ V

pF

Reverse breakdo

wn voltage

tested with 5μA pulses

Reverse recovery time

from I

ns

from I

ns

Thermal resistance junction to ambient

K/W

Rectification efficiency @ 100MHz,V

ηv

-

GALAXY ELECTRICAL

-

-

MIN

TYP

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

4

2

35

-

-

0.45

-

-

MAX

4.0

-

-

-

-

2.0

mA

-

-

1

.0

-

1N4154

MECHANICAL DATA

SMALL SIGNAL SWITCHING DIODE

Case: DO-35,glass case

REVERSE VOLTAGE : 25 V

CURRENT: 0.15 A

Polarity: Color band denotes cathode

DO-35

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

-

100

100

V

1N

415

4

25

35

Dimensions in millimeters