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PT481F 데이터시트(PDF) 2 Page - Sharp Corporation

부품명 PT481F
상세설명  Narrow Acceptance High Sensitivity Phototransistor
PDF  4 Pages
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제조업체  SHARP [Sharp Corporation]
홈페이지  http://sharp-world.com/
Logo SHARP - Sharp Corporation

PT481F 데이터시트(HTML) 2 Page - Sharp Corporation

  PT481F Datasheet HTML 1Page - Sharp Corporation PT481F Datasheet HTML 2Page - Sharp Corporation PT481F Datasheet HTML 3Page - Sharp Corporation PT481F Datasheet HTML 4Page - Sharp Corporation  
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PT481/PT481F/PT483F1
s Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
current
PT481
IC
V CE =2V
Ee = 0.1mW/cm2
1.5
10
25
mA
PT481F
0.9
-
27
mA
PT483F1
1.5
-
4.0
mA
Collector dark current
ICEO
V CE = 10V, E e =0
-
-
10-6
A
*2 Collector-emitter saturation voltage
V CE(sat)
-
0.7
1.0
V
Ee = 1mW/cm2
λp
-
800
-
nm
-
-
860
-
nm
t r
VCE = 2V, I C = 10mA
-
80
-
µ s
tf
RL = 100
Ω
-70
-
µ s
Ic = 2.5mA
*2 Collector
( Ta = 25˚C)
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
Peak emission
PT481
wavelength
PT481F/PT483F1
Response time
Rise time
Fall time
- 25
0
20
10
30
50
40
60
80
70
25
0
50
100
75
85
- 25
0
25
50
75
100
10 -11
5
5
5
5
5
5
5
5
10 -10
10 -8
10 -7
10 -6
10 -5
10 -4
VCE
= 10V
Ambient temperature Ta (˚C)
- 25
0
25
50
75
100
50
75
100
125
150
175
10-1
10
25
25
1
2
5
20
50
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
10 -9
Irradiance Ee ( mW/cm
2)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2 Collector Dark Current vs.
Ambient Temperature
Fig. 3 Relative Collector Current vs.
Ambient Temperature
(PT481 )
VCE =2V
T a = 25˚C
VCE =2V
Ee = 0.1mW/cm
2
Fig.4-a Collector Current vs. Irradiance
1



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