| 전자부품 데이터시트 검색엔진 |
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S1G 데이터시트(PDF) 2 Page - Diotec Semiconductor |
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S1G 데이터시트(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() S1A ... S1Y 2 http://www.diotec.com/ © Diotec Semiconductor AG 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 30a-(1a-1.1v) Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 10 10 1 2 [A] î F 1 10 10 [n] 10 2 3 Relative transient thermal impedance vs. pulse duration (typical) Relativer transienter Wärmewiderstand über Impulsdauer (typisch) 100 10 1 0.01 0.1 1 10 10 10 2 3 [s] [t ] p [%] Z R thA thA 25 20 15 10 5 0 [pF] C j V R [V] Junction capacitance vs. reverse voltage (typical) Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.) Rated forward current vs. temp. of the terminals in Abh. v. d. Temp. der Terminals Zul. Richtstrom 120 100 80 60 40 20 0 I FAV [%] [°C] T T 150 100 50 0 10 10 1 10 2 1 -2 10-1 [µA] I R 0 V RRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung T = 25°C j T = 100°C j T = 125°C j |
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