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GaAs MMIC SPDT NON-REFLECTIVE

SWITCH, DC - 12 GHz

v04.0110

General Description

Features

Functional Diagram

The HMC232LP4(E) is a broadband high isolation

non-reflective GaAs MESFET SPDT switch in a low

cost leadless QFN surface mount plastic package.

Covering DC to 12 GHz, the switch features >60

dB isolation up to 3 GHz and >42 dB isolation up to

12 GHz. Input P1dB compression is +27 dBm typ-

ical, while input IP3 is +50 dBm. The switch operates

using complementary negative control voltage logic

lines of -5/0V and requires no bias supply.

Isolation: 60 dB @ 3 GHz

52 dB @ 6 GHz

Input P1dB: +27 dBm

Insertion Loss: 1.5 dB Typical @ 6 GHz

Non-Reflective Design

24 Lead 4x4mm QFN Package: 16mm2

Included in the HMC-DK005 Designer’s Kit

Typical Applications

The HMC232LP4(E) is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Test Instrumentation

Parameter

Frequency

Min.

Typ.

Max.

Units

Insertion Loss

DC - 3.0 GHz

DC - 6.0 GHz

DC - 9.0 GHz

DC - 12.0 GHz

1.4

1.5

2.0

2.7

1.7

1.8

2.3

3.1

dB

dB

dB

dB

Isolation

DC - 3.0 GHz

DC - 6.0 GHz

DC - 9.0 GHz

DC - 12.0 GHz

55

47

40

37

60

52

45

42

dB

dB

dB

dB

Return Loss

“On State”

DC - 6.0 GHz

DC - 9.0 GHz

DC - 12.0 GHz

18

16

11

dB

dB

dB

Return Loss RF1, RF2

“Off State”

DC - 12.0 GHz

14

dB

Input Power for 1 dB Compression

0.5 - 12.0 GHz

24

27

dBm

Input Third Order Intercept

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

0.5 - 12.0 GHz

45

50

dBm

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 12.0 GHz

3

6

ns

ns